FF450R12ME4B61BPSA1 Infineon Technologies


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Виробник: Infineon Technologies
Description: FF450R12ME4 - INSULATED GATE BIP
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 675 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Технічний опис FF450R12ME4B61BPSA1 Infineon Technologies

Description: FF450R12ME4 - INSULATED GATE BIP, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V, Current - Collector Cutoff (Max): 3 mA, Power - Max: 2250 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 675 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: AG-ECONOD-3-2, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.