FF450R17ME3BOSA1

FF450R17ME3BOSA1 Infineon Technologies


Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2 Виробник: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
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Технічний опис FF450R17ME3BOSA1 Infineon Technologies

Description: IGBT MOD 1700V 605A 2250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 605 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 2250 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V.