Технічний опис FF900R12IE4 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 900A, Case: AG-PRIME2-1, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.8kA, Power dissipation: 5.1kW, Technology: PrimePACK™ 2, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції FF900R12IE4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FF900R12IE4 | Виробник : INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 900A Case: AG-PRIME2-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Power dissipation: 5.1kW Technology: PrimePACK™ 2 Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
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FF900R12IE4 | Виробник : Infineon Technologies |
IGBT Modules IGBT 1200V 900A |
товару немає в наявності |
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| FF900R12IE4 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 900A Case: AG-PRIME2-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Power dissipation: 5.1kW Technology: PrimePACK™ 2 Mechanical mounting: screw |
товару немає в наявності |