Продукція > FAIRCHILD SEMICONDUCTOR > FGD3N60LSDTM-T-FS

FGD3N60LSDTM-T-FS Fairchild Semiconductor

fgd3n60lsd-d.pdf
Виробник: Fairchild Semiconductor
Description: IGBT, 6A, 600V, N-CHANNEL
Reverse Recovery Time (trr): 234 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Power - Max: 40 W
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 12.5 nC
Test Condition: 480V, 3A, 470Ohm, 10V
Switching Energy: 250µJ (on), 1mJ (off)
Td (on/off) @ 25°C: 40ns/600ns
Supplier Device Package: TO-252, (D-Pak)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
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Технічний опис FGD3N60LSDTM-T-FS Fairchild Semiconductor

Description: IGBT, 6A, 600V, N-CHANNEL, Reverse Recovery Time (trr): 234 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Power - Max: 40 W, Current - Collector Pulsed (Icm): 25 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 6 A, Gate Charge: 12.5 nC, Test Condition: 480V, 3A, 470Ohm, 10V, Switching Energy: 250µJ (on), 1mJ (off), Td (on/off) @ 25°C: 40ns/600ns, Supplier Device Package: TO-252, (D-Pak), Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A.