Технічний опис FGP5N60UFDTU ON Semiconductor
Description: IGBT FIELD STOP 600V 10A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A, Supplier Device Package: TO-220-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 6ns/44ns, Switching Energy: 75µJ (on), 59µJ (off), Test Condition: 400V, 5A, 20Ohm, 15V, Gate Charge: 19.5 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 81 W.
Інші пропозиції FGP5N60UFDTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FGP5N60UFDTU | Виробник : onsemi |
 Description: IGBT FIELD STOP 600V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A Supplier Device Package: TO-220-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 6ns/44ns Switching Energy: 75µJ (on), 59µJ (off) Test Condition: 400V, 5A, 20Ohm, 15V Gate Charge: 19.5 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 15 A Power - Max: 81 W |
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