FH06004Y fastSiC
Виробник: fastSiCDescription: DIODE SIL CARB 650V 6.2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 6.2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 35 µA @ 520 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 175.87 грн |
| 10+ | 62.23 грн |
| 100+ | 57.97 грн |
Відгуки про товар
Написати відгук
Технічний опис FH06004Y fastSiC
Description: DIODE SIL CARB 650V 6.2A DO221AC, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 16pF @ 400V, 1MHz, Current - Average Rectified (Io): 6.2A, Supplier Device Package: DO-221AC (SlimSMA), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A, Current - Reverse Leakage @ Vr: 35 µA @ 520 V.