Технічний опис FJ3303010L Panasonic
Description: MOSFET P-CH 30V 100MA SSSMINI3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 7Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1µA, Supplier Device Package: SSSMini3-F2-B, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 3 V.
Інші пропозиції FJ3303010L
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FJ3303010L | Виробник : Panasonic |
 Trans MOSFET P-CH Si 30V 0.1A 3-Pin SSSMini3-F2-B T/R |
товар відсутній |
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FJ3303010L | Виробник : Panasonic |
Trans MOSFET P-CH Si 30V 0.1A 3-Pin SSSMini3-F2-B T/R |
товар відсутній |
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FJ3303010L | Виробник : Panasonic Electronic Components |
Description: MOSFET P-CH 30V 100MA SSSMINI3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: SSSMini3-F2-B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 3 V |
товар відсутній |