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FJP5027O

FJP5027O onsemi

fjp5027-d.pdf
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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Технічний опис FJP5027O onsemi

Description: TRANS NPN 800V 3A TO220-3, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 800 V, Current - Collector (Ic) (Max): 3 A, Part Status: Obsolete, Supplier Device Package: TO-220-3, Frequency - Transition: 15MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.