FK4B01110L Nuvoton Technology Corporation
Виробник: Nuvoton Technology CorporationDescription: SINGLE NCH MOSFET 12V, 2.3A 57MO
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 340mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 118µA
Supplier Device Package: ALGA004-W-0606-RA01
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V
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Технічний опис FK4B01110L Nuvoton Technology Corporation
Description: SINGLE NCH MOSFET 12V, 2.3A 57MO, Packaging: Tape & Reel (TR), Package / Case: 4-XFLGA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 340mW (Ta), Vgs(th) (Max) @ Id: 1V @ 118µA, Supplier Device Package: ALGA004-W-0606-RA01, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V.