FL06150G fastSiC

Description: SICFET N-CH 650V 15A PDFN8x8, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 8mA, Supplier Device Package: 4-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): 15V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V.