FL06250A fastSiC

Description: SICFET N-CH 650V 10.7A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V, Power Dissipation (Max): 46.8W (Tc), Vgs(th) (Max) @ Id: 2V @ 6mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): 15V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V.