FL06500A fastSiC
Виробник: fastSiCDescription: SICFET N-CH 650V 6.1A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 1A, 15V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 3mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 223 pF @ 400 V
Packaging: Tape & Reel (TR)
на замовлення 263 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 140.52 грн |
| 10+ | 49.54 грн |
| 100+ | 46.19 грн |
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Технічний опис FL06500A fastSiC
Description: SICFET N-CH 650V 6.1A TO-252, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 1A, 15V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 3mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): 15V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 223 pF @ 400 V, Packaging: Tape & Reel (TR).