FMOS2SK3018-Q1-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.Description: 0.1A 30V N-Channel Enhancement M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
FET Feature: Logic Level Gate, 4V Drive
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Qualification: AEC-Q101
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 1.57 грн |
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Технічний опис FMOS2SK3018-Q1-H Formosa Microsemi Co., Ltd.
Description: 0.1A 30V N-Channel Enhancement M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, 4V Drive, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Qualification: AEC-Q101.