FMOSAC25P10-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.
Description: MOSFET
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 5000+ | 14.52 грн |
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Технічний опис FMOSAC25P10-H Formosa Microsemi Co., Ltd.
Description: MOSFET, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 78W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Vgs (Max): ±20V.