FMOSBSS138K2-Q1-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.
Description: 0.22A 50V N-Channel Enhancement
Qualification: AEC-Q101
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
FET Feature: Logic Level Gate, 4V Drive
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 1.43 грн |
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Технічний опис FMOSBSS138K2-Q1-H Formosa Microsemi Co., Ltd.
Description: 0.22A 50V N-Channel Enhancement, Qualification: AEC-Q101, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 350mW (Ta), FET Feature: Logic Level Gate, 4V Drive, Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).