FMOSGTQC330N10-Q1-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.
Description: 330A 100V N-Channel Shield Gate
Qualification: AEC-Q101
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TOLL-8L
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 330A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 81.21 грн |
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Технічний опис FMOSGTQC330N10-Q1-H Formosa Microsemi Co., Ltd.
Description: 330A 100V N-Channel Shield Gate, Qualification: AEC-Q101, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TOLL-8L, Power Dissipation (Max): 400W (Tc), Current - Continuous Drain (Id) @ 25°C: 330A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Packaging: Tape & Reel (TR).