FMOSGTQC393N10-Q1-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.
Description: 393A 100V N-Channel Shield Gate
Qualification: AEC-Q101
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Grade: Automotive
Supplier Device Package: TOLL-8L
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TOLL
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 88.06 грн |
| 4000+ | 77.73 грн |
| 10000+ | 75.61 грн |
| 20000+ | 66.98 грн |
| 100000+ | 64.99 грн |
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Технічний опис FMOSGTQC393N10-Q1-H Formosa Microsemi Co., Ltd.
Description: 393A 100V N-Channel Shield Gate, Qualification: AEC-Q101, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Grade: Automotive, Supplier Device Package: TOLL-8L, Power Dissipation (Max): 429W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TOLL, Packaging: Tape & Reel (TR).