FMOSTHAC62N06-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Vgs (Max): ±20V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 7.94 грн |
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Технічний опис FMOSTHAC62N06-H Formosa Microsemi Co., Ltd.
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Vgs (Max): ±20V.