FMSBSS138-Q1-H Formosa Microsemi Co., Ltd.
Виробник: Formosa Microsemi Co., Ltd.
Description: 50V N-Channel Small Signal MOSFE
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 225mW (Ta)
FET Feature: Logic Level Gate, 4V Drive
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Кількість | Ціна |
|---|---|
| 3000+ | 0.80 грн |
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Технічний опис FMSBSS138-Q1-H Formosa Microsemi Co., Ltd.
Description: 50V N-Channel Small Signal MOSFE, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 225mW (Ta), FET Feature: Logic Level Gate, 4V Drive, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).