FP35R12U1T4BPSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 54A 250W
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 54 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Collector Cutoff (Max): 1 mA
Power - Max: 250 W
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Технічний опис FP35R12U1T4BPSA1 Infineon Technologies
Description: IGBT MOD 1200V 54A 250W, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 54 A, Part Status: Not For New Designs, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Current - Collector Cutoff (Max): 1 mA, Power - Max: 250 W.

