Технічний опис FQA11N90C-F109 ON Semiconductor
Description: MOSFET N-CH 900V 11A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.
Інші пропозиції FQA11N90C-F109
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FQA11N90C_F109 Код товару: 48424 |
Транзистори > IGBT |
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FQA11N90C-F109 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P Tube |
товар відсутній |
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FQA11N90C-F109 | Виробник : onsemi |
Description: MOSFET N-CH 900V 11A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
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FQA11N90C-F109 | Виробник : onsemi / Fairchild |
MOSFET 900V N-Ch Q-FET advance C-Series |
товар відсутній |