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FQAF14N30

FQAF14N30 Fairchild Semiconductor

FAIRS05397-1.pdf?t.download=true&u=5oefqw
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 300V 11.4A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
310+77.72 грн
Мінімальне замовлення: 310
В кошику  од. на суму  грн.
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Технічний опис FQAF14N30 Fairchild Semiconductor

Description: MOSFET N-CH 300V 11.4A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Rds On (Max) @ Id, Vgs: 290mOhm @ 5.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 90W (Tc), Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±30V.