FQI3N90TU onsemi

Description: MOSFET N-CH 900V 3.6A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V, Power Dissipation (Max): 3.13W (Ta), 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.