FQP10N20L Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 87W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V.