FQPF13N50CTC003 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CHANNEL 500V, 13A
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Відгуки про товар
Написати відгук
Технічний опис FQPF13N50CTC003 Fairchild Semiconductor
Description: MOSFET N-CHANNEL 500V, 13A, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10.