FQPF4N50

FQPF4N50 Fairchild Semiconductor


FAIRS06237-1.pdf?t.download=true&u=5oefqw
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 2.3A TO220F
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
634+34.87 грн
Мінімальне замовлення: 634
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис FQPF4N50 Fairchild Semiconductor

Description: MOSFET N-CH 500V 2.3A TO220F, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.15A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), FET Type: N-Channel.