FR106B-G Comchip Technology

Description: DIODE GEN PURP 800V 1A DO41, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Bulk.