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FS200R07A02E3S6BKSA2

FS200R07A02E3S6BKSA2 Infineon Technologies


Infineon-FS200R07A02E3_S6-DataSheet-v03_01-EN.pdf?fileId=5546d462636cc8fb016402b5998407c4 Виробник: Infineon Technologies
Description: IGBT MODULE HYBRID 28MDIP
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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Технічний опис FS200R07A02E3S6BKSA2 Infineon Technologies

Description: IGBT MODULE HYBRID 28MDIP, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: PG-MDIP-28, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 700 V, Power - Max: 694 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V.