FS200R07A1E3BOSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Module N-CH 650V 250A 790000mW Automotive 23-Pin HYBRID1-1 Tray
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Технічний опис FS200R07A1E3BOSA1 Infineon Technologies
Description: IGBT MOD 650V 250A 790W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 790 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Інші пропозиції FS200R07A1E3BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FS200R07A1E3BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 650V 250A 790W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 790 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
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