Технічний опис FS75R07U1E4BPSA1 Infineon Technologies
Description: IGBT MOD 650V 100A 275W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 275 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V.
Інші пропозиції FS75R07U1E4BPSA1
| Фото | Назва | Виробник | Інформація |
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FS75R07U1E4BPSA1 | Виробник : Infineon Technologies |
 Description: IGBT MOD 650V 100A 275WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 275 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V |
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