FST83100SM GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 80A D61-3SM
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D61-3SM
Current - Average Rectified (Io) (per Diode): 80A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D61-3SM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
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Технічний опис FST83100SM GeneSiC Semiconductor
Description: DIODE MODULE 100V 80A D61-3SM, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D61-3SM, Current - Average Rectified (Io) (per Diode): 80A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: D61-3SM, Packaging: Bulk, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Obsolete.