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FZ2400R12KE3B9NOSA1 Infineon Technologies

INFNS28640-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Current - Collector Cutoff (Max): 5 mA
Power - Max: 11500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3200 A
Part Status: Active
Supplier Device Package: AG-IHM190-2-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 170 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+90860.25 грн
В кошику  од. на суму  грн.
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Технічний опис FZ2400R12KE3B9NOSA1 Infineon Technologies

Description: IGBT MODULE, Current - Collector Cutoff (Max): 5 mA, Power - Max: 11500 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 3200 A, Part Status: Active, Supplier Device Package: AG-IHM190-2-1, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 170 nF @ 25 V.