FZ750R65KE3NOSA1

FZ750R65KE3NOSA1 Infineon Technologies


Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974 Виробник: Infineon Technologies
Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
на замовлення 1 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+179749.27 грн
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Технічний опис FZ750R65KE3NOSA1 Infineon Technologies

Description: IGBT MOD 6500V 750A A-IHV190-6, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -50°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 750 A, Voltage - Collector Emitter Breakdown (Max): 6500 V, Power - Max: 14500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 205 nF @ 25 V.