G05NP10S Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET 100V 5A/6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Tc), 2.5W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 797pF @ 25V, 760pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 15.05 грн |
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Технічний опис G05NP10S Goford Semiconductor
Description: MOSFET 100V 5A/6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Tc), 2.5W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 797pF @ 25V, 760pF @ 25V, Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP.