G2K2P10SE Goford Semiconductor

Description: MOSFET P-CH ESD 100V 3.5A SOP-8, Input Capacitance (Ciss) (Max) @ Vds: 1653 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Tc), FET Feature: Standard, Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).