GA100JT17-227 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1700V 160A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Drain to Source Voltage (Vdss): 1700 V
Part Status: Obsolete
Supplier Device Package: SOT-227
Power Dissipation (Max): 535W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Технічний опис GA100JT17-227 GeneSiC Semiconductor
Description: TRANS SJT 1700V 160A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V, Drain to Source Voltage (Vdss): 1700 V, Part Status: Obsolete, Supplier Device Package: SOT-227, Power Dissipation (Max): 535W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 100A, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.