GA16JT17-247 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1700V 16A TO247AB
Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.7 kV
Resistance - RDS(On): 50 mOhms
Power - Max: 282 W
Current Drain (Id) - Max: 45 A
Input Capacitance (Ciss) (Max) @ Vds: 3078pF @ 1200V
Drain to Source Voltage (Vdss): 1.7 kV
Supplier Device Package: TO-247-3
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис GA16JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 16A TO247AB, Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.7 kV, Resistance - RDS(On): 50 mOhms, Power - Max: 282 W, Current Drain (Id) - Max: 45 A, Input Capacitance (Ciss) (Max) @ Vds: 3078pF @ 1200V, Drain to Source Voltage (Vdss): 1.7 kV, Supplier Device Package: TO-247-3, Power Dissipation (Max): 282W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.