GC1307-150A/TR Microchip Technology
Виробник: Microchip Technology
Description: SI TVAR NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.3pF @ 4V, 1MHz
Q @ Vr, F: 3100 @ 4V, 50MHz
Capacitance Ratio Condition: C4/C30
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 1.85
Description: SI TVAR NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.3pF @ 4V, 1MHz
Q @ Vr, F: 3100 @ 4V, 50MHz
Capacitance Ratio Condition: C4/C30
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 1.85
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Технічний опис GC1307-150A/TR Microchip Technology
Description: SI TVAR NON HERMETIC EPSM SMT, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Diode Type: Single, Operating Temperature: -55°C ~ 125°C, Capacitance @ Vr, F: 3.3pF @ 4V, 1MHz, Q @ Vr, F: 3100 @ 4V, 50MHz, Capacitance Ratio Condition: C4/C30, Supplier Device Package: Chip, Voltage - Peak Reverse (Max): 30 V, Capacitance Ratio: 1.85.