GC1608-85 Microchip Technology
Виробник: Microchip Technology
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz
Q @ Vr, F: 1900 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 5.4
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz
Q @ Vr, F: 1900 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 5.4
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Технічний опис GC1608-85 Microchip Technology
Description: SI TVAR HERMETIC PILL, Packaging: Tray, Diode Type: Single, Operating Temperature: -55°C ~ 125°C, Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz, Q @ Vr, F: 1900 @ 4V, 50MHz, Capacitance Ratio Condition: C0/C45, Voltage - Peak Reverse (Max): 45 V, Capacitance Ratio: 5.4.