Продукція > GOFORD SEMICONDUCTOR > GC180N65D8

GC180N65D8 Goford Semiconductor

Виробник: Goford Semiconductor
Description: MOSFET,N-CH,650V,20A,151W,DFN8*8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V

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Технічний опис GC180N65D8 Goford Semiconductor

Description: MOSFET,N-CH,650V,20A,151W,DFN8*8, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V.

Інші пропозиції GC180N65D8

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	GC180N65D8	Виробник : Goford Semiconductor	Description: MOSFET,N-CH,650V,20A,151W,DFN88 Packaging:* Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V	товару немає в наявності	В кошику од. на суму грн.