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GCMX003A120S7B1 SemiQ

GCMX003A120S7B1.pdf
Виробник: SemiQ
Description: 1200V 3M SIC HALF BRIDGE 62MM MO
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.546kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Vgs(th) (Max) @ Id: 4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V
Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
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Технічний опис GCMX003A120S7B1 SemiQ

Description: 1200V 3M SIC HALF BRIDGE 62MM MO, Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1.546kW (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Vgs(th) (Max) @ Id: 4V @ 120mA, Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V, Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 529A (Tc).