GCMX080A120B2H2P SemiQ
Виробник: SemiQ
Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
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Технічний опис GCMX080A120B2H2P SemiQ
Description: 1200V, 80M SIC MOSFET FULL BRIDG, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 119W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V, Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 10mA.
Інші пропозиції GCMX080A120B2H2P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GCMX080A120B2H2P | Виробник : SemiQ |
 MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module |
товару немає в наявності |