GD100FFY120C6S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - GD100FFY120C6S - IGBT-Modul, Dreiphasen-Vollbrücke, 155 A, 1.7 V, 511 W, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Platte
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: Trench/Feldstop
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.7V
IGBT-Anschluss: Einpressmontage
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V
Verlustleistung Pd: 511W
Verlustleistung: 511W
SVHC: To Be Advised
Bauform - Transistor: Modul
Kollektor-Emitter-Spannung V(br)ceo: 1.2kV
Dauerkollektorstrom: 155A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
IGBT-Konfiguration: Dreiphasen-Vollbrücke
productTraceability: No
usEccn: EAR99
DC-Kollektorstrom: 155A
Betriebstemperatur, max.: 150°C
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Технічний опис GD100FFY120C6S STARPOWER
Description: STARPOWER - GD100FFY120C6S - IGBT-Modul, Dreiphasen-Vollbrücke, 155 A, 1.7 V, 511 W, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Platte, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: Trench/Feldstop, Sperrschichttemperatur Tj, max.: 150°C, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 1.7V, IGBT-Anschluss: Einpressmontage, Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V, Verlustleistung Pd: 511W, Verlustleistung: 511W, SVHC: To Be Advised, Bauform - Transistor: Modul, Kollektor-Emitter-Spannung V(br)ceo: 1.2kV, Dauerkollektorstrom: 155A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 1.2kV, IGBT-Konfiguration: Dreiphasen-Vollbrücke, productTraceability: No, usEccn: EAR99, DC-Kollektorstrom: 155A, Betriebstemperatur, max.: 150°C.
Інші пропозиції GD100FFY120C6S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Technology: Advanced Trench FS IGBT Mechanical mounting: screw Pulsed collector current: 200A |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| GD100FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.


