GD1400HFY120P2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: P2.0
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 1.4kA
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: P2.0
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 1.4kA
кількість в упаковці: 8 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис GD1400HFY120P2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A, Technology: Advanced Trench FS IGBT, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Case: P2.0, Pulsed collector current: 2.8kA, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge, Gate-emitter voltage: ±20V, Collector current: 1.4kA, кількість в упаковці: 8 шт.
Інші пропозиції GD1400HFY120P2S
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
GD1400HFY120P2S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: P2.0 Pulsed collector current: 2.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 1.4kA |
товар відсутній |