GD1400HFY120P2S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: P2.0
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 1.4kA
кількість в упаковці: 8 шт
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Технічний опис GD1400HFY120P2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A, Technology: Advanced Trench FS IGBT, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Case: P2.0, Pulsed collector current: 2.8kA, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge, Gate-emitter voltage: ±20V, Collector current: 1.4kA, кількість в упаковці: 8 шт.

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GD1400HFY120P2S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: P2.0
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 1.4kA
товар відсутній