GD1400HFY120P2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
кількість в упаковці: 8 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис GD1400HFY120P2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Case: P2.0, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 1.4kA, Pulsed collector current: 2.8kA, кількість в упаковці: 8 шт.
Інші пропозиції GD1400HFY120P2S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD1400HFY120P2S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Max. off-state voltage: 1.2kV Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: P2.0 Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 1.4kA Pulsed collector current: 2.8kA |
товару немає в наявності |