GD150PIY120C6SN STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 10 шт
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Технічний опис GD150PIY120C6SN STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw, Mechanical mounting: screw, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Electrical mounting: Press-in PCB, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Case: C6 62mm, Max. off-state voltage: 1.2kV, кількість в упаковці: 10 шт.
Інші пропозиції GD150PIY120C6SN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD150PIY120C6SN | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Mechanical mounting: screw Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: C6 62mm Max. off-state voltage: 1.2kV |
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