GD150PIY120C6SN STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
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Технічний опис GD150PIY120C6SN STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw, Type of semiconductor module: IGBT, Mechanical mounting: screw, Collector current: 150A, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Case: C6 62mm, Semiconductor structure: diode/transistor, Electrical mounting: Press-in PCB.