GD200HFY120C8S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - GD200HFY120C8S - IGBT-Modul, Halbbrücke, 309 A, 1.7 V, 1.006 kW, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Platte
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: Trench/Feldstop
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.7V
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V
Verlustleistung Pd: 1.006kW
Verlustleistung: 1.006kW
SVHC: To Be Advised
Bauform - Transistor: Modul
Kollektor-Emitter-Spannung V(br)ceo: 1.2kV
Dauerkollektorstrom: 309A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
IGBT-Konfiguration: Halbbrücke
productTraceability: No
usEccn: EAR99
DC-Kollektorstrom: 309A
Betriebstemperatur, max.: 150°C
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Технічний опис GD200HFY120C8S STARPOWER
Description: STARPOWER - GD200HFY120C8S - IGBT-Modul, Halbbrücke, 309 A, 1.7 V, 1.006 kW, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Platte, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: Trench/Feldstop, Sperrschichttemperatur Tj, max.: 150°C, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 1.7V, IGBT-Anschluss: Stiftbolzen, Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V, Verlustleistung Pd: 1.006kW, Verlustleistung: 1.006kW, SVHC: To Be Advised, Bauform - Transistor: Modul, Kollektor-Emitter-Spannung V(br)ceo: 1.2kV, Dauerkollektorstrom: 309A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 1.2kV, IGBT-Konfiguration: Halbbrücke, productTraceability: No, usEccn: EAR99, DC-Kollektorstrom: 309A, Betriebstemperatur, max.: 150°C.
Інші пропозиції GD200HFY120C8S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GD200HFY120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: C8 48mm Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT half-bridge Type of semiconductor module: IGBT Technology: Advanced Trench FS IGBT Mechanical mounting: screw Pulsed collector current: 400A |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. |
| GD200HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 400A
товару немає в наявності
Мінімальне замовлення: 16 шт
В кошику
од. на суму грн.


