GD225HFX170C6S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис GD225HFX170C6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB; screw, Case: C6 62mm, Mechanical mounting: screw, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 225A, Pulsed collector current: 450A, Technology: Trench FS IGBT, Topology: IGBT half-bridge, кількість в упаковці: 10 шт.
Інші пропозиції GD225HFX170C6S
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
GD225HFX170C6S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB; screw Case: C6 62mm Mechanical mounting: screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 225A Pulsed collector current: 450A Technology: Trench FS IGBT Topology: IGBT half-bridge |
товару немає в наявності |