GD25LD40EK6IGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 6-USON (1.2x1.2)
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 12 ns
Memory Organization: 512K x 8
Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 6-USON (1.2x1.2)
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 12 ns
Memory Organization: 512K x 8
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Технічний опис GD25LD40EK6IGR GigaDevice Semiconductor (HK) Limited
Description: NOR FLASH, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 50 MHz, Memory Format: FLASH, Supplier Device Package: 6-USON (1.2x1.2), Write Cycle Time - Word, Page: 100µs, 6ms, Memory Interface: SPI - Dual I/O, Access Time: 12 ns, Memory Organization: 512K x 8.