GD25LE128EXHEGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 128MBIT SPI/QUAD 8USON
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 100µs, 4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис GD25LE128EXHEGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 128MBIT SPI/QUAD 8USON, Memory Organization: 16M x 8, Access Time: 6 ns, Memory Interface: SPI - Quad I/O, QPI, Write Cycle Time - Word, Page: 100µs, 4ms, Supplier Device Package: 8-FO-USON8 (3x3), Memory Format: FLASH, Clock Frequency: 133 MHz, Technology: FLASH - NOR (SLC), Voltage - Supply: 1.65V ~ 2V, Operating Temperature: -40°C ~ 125°C (TA), Memory Type: Non-Volatile, Memory Size: 128Mbit, Mounting Type: Surface Mount, Package / Case: 8-XDFN Exposed Pad, Packaging: Tape & Reel (TR).