GD25LE128EXHEGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 128MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-FO-USON8 (3x3)
Write Cycle Time - Word, Page: 100µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
Description: IC FLASH 128MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-FO-USON8 (3x3)
Write Cycle Time - Word, Page: 100µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис GD25LE128EXHEGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 128MBIT SPI/QUAD 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-FO-USON8 (3x3), Write Cycle Time - Word, Page: 100µs, 4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 6 ns, Memory Organization: 16M x 8.