GD25LF80EEEGR GigaDevice Semiconductor (HK) Limited

Description: NOR FLASH, Memory Organization: 1M x 8, Access Time: 5.5 ns, Memory Interface: SPI - Quad I/O, QPI, DTR, Write Cycle Time - Word, Page: 100µs, 4ms, Supplier Device Package: 8-USON (3x2), Memory Format: FLASH, Clock Frequency: 133 MHz, Technology: FLASH - NOR (SLC), Voltage - Supply: 1.65V ~ 2V, Operating Temperature: -40°C ~ 125°C (TA), Memory Type: Non-Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 8-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).